FDP8880 / FDB8880 is a N-Channel MOSFET from Fairchild Semiconductor Corporation. It features high performance trench technology for extremely low rDS(ON), low gate charge, high power and current handling capability, and is RoHS compliant.
The document provides a comprehensive technical overview of the Fairchild FDP8880 and FDB8880 N-Channel MOSFETs. These devices utilize high-performance trench technology to achieve extremely low on-resistance (DS(ON)) and low gate charge, making them optimized for improving the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. The datasheet covers maximum ratings, electrical characteristics, and dynamic performance.
| Drain to Source Voltage | 30 V |
|---|---|
| Gate to Source Voltage | 42 V |
| Continuous Drain Current (Vgs=10V) | 54 A |
| Power Dissipation | 55 W |
| Operating Temperature Range | -55 to 175 °C |
| Thermal Resistance (Junction to Case) | 2.73 °C/W |
| Input Capacitance | 1240 pF |
| Turn-On Time | 171 ns |
They are designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The FDP8880 is available in the TO-220AB package, while the FDB8880 is available in the TO-263AB package.
Yes, the document lists the product as RoHS Compliant.