Fairchild Semiconductor FDC5612 60V N-Channel PowerTrench MOSFET Datasheet

The FDC5612 is a 60V N-Channel PowerTrench® MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.


Fairchild Semiconductor FDC5612 60V N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
79 KB
Published
11 July, 2012
Updated
28 September, 2023
MD5 checksum
05C6D611ABEEBA12EF70FD55E61AAF60

About this manual

The FDC5612 is a 60V N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features faster switching, lower gate charge, and high-performance trench technology.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Outlines and Ordering Information
  • Trademarks
  • Disclaimer
  • Product Status Definitions

Specifications

Drain-Source Voltage60 V
Pulsed Drain Current20 A
Package TypeSuperSOT-6
Gate Charge (Typical)12.5 nC

Frequently asked questions

What is the maximum continuous drain current rating?

The device supports a continuous drain current of 4.3 A.

How much power can this MOSFET dissipate in single operation?

It has a maximum power dissipation rating of 1.6 W for single operation.

What is the thickness of the SuperSOT-6 package?

The SuperSOT-6 package has a low profile that is 1mm thick.

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