FDB86135 N-Channel PowerTrench MOSFET is a high-performance N-channel MOSFET with fast switching speed, low gate charge, extremely low RDS(on), and high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDB86135, an N-Channel PowerTrench MOSFET designed with advanced process technology to minimize on-state resistance while maintaining superior switching performance. The device features a maximum continuous drain current of 176A (silicon limited) and operates at voltages up to 100V.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Silicon Limited) | 176 A |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | D2-PAK |
The device is suitable for DC-DC primary bridge, DC-DC synchronous rectification, and hot swap applications.
Yes, the datasheet explicitly states that the product is RoHS Compliant.