FDB8860 N-Channel Logic Level PowerTrench® MOSFET is a low RDS(ON), low Qg(5) N-channel logic level power MOSFET with UIS capability, RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor FDB8860 N-Channel Logic Level PowerTrench MOSFET. The device features a 30V drain-to-source breakdown voltage, an 80A continuous current rating at specific conditions, and a typical on-resistance of 2.6mΩ.
| Drain to Source Voltage (Vdss) | 30 V |
|---|---|
| On Resistance (Rds(on)) | 2.6 mΩ |
| Package Type | TO-263AB |
| Operating Temperature Range | -55 to +175 °C |
The typical drain-to-source on-resistance is 2.6mΩ.
The maximum gate-to-source voltage rating is +20V.