This document describes the features and characteristics of FDB8453LZ N-Channel PowerTrench® MOSFET, including maximum on-state resistance, ESD protection level, and fast switching.
This document is a datasheet for the Fairchild Semiconductor FDB8453LZ, an N-Channel PowerTrench MOSFET. The device is designed to minimize on-state resistance and switching loss, making it suitable for inverter and power supply applications. It features a TO-263AB package and includes a G-S zener for enhanced ESD protection.
The datasheet provides detailed electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance graphs such as normalized on-resistance versus junction temperature, gate charge characteristics, and forward bias safe operating area.
| On-Resistance (Typical) | 7.0 mΩ |
|---|---|
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Package Type | TO-263AB |
The device is suitable for use in inverters and power supplies.
Yes, the datasheet lists the device as RoHS Compliant.
The typical HBM ESD protection level is 7.6kV.