This document describes the features and characteristics of the FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET, which is suitable for battery management, load switch, battery protection, and DC/DC conversion applications.
This document is a datasheet for the Fairchild Semiconductor FDC658AP, a Single P-Channel Logic Level PowerTrench MOSFET. The device is optimized for battery power management applications, including battery management, load switches, battery protection, and DC/DC conversion. It features a SuperSOT-3 package and is RoHS Compliant.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics for the device. Key specifications include a drain-source voltage of -30V, a continuous drain current of -4A, and a static drain-source on-resistance of 50mQ. The document also details thermal characteristics, package marking, and ordering information.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +25 V |
| Continuous Drain Current | -4 A |
| Maximum Power Dissipation | 1.6 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 78 °C/W |
| Thermal Resistance, Junction-to-Case | 30 °C/W |
| Drain-Source Breakdown Voltage | -30 V |
| Gate Threshold Voltage | -1.8 to -3 V |
| Static Drain-Source On-Resistance | 50 mQ |
| Total Gate Charge | 84 nC |
| Maximum Continuous Drain-Source Diode Forward Current | -1.3 A |
The operating and storage junction temperature range is -55 to +150 °C.