The FDC855N is an N-channel logic level MOSFET from Fairchild Semiconductor with a 30V, 6.1A, 27mΩ rating. It is ideal for applications where in-line power loss is critical.
The FDC855N is a single N-channel, logic level, PowerTrench MOSFET designed for low voltage and battery-powered applications. Utilizing Fairchild Semiconductor's advanced PowerTrench process, the device features minimized on-state resistance to optimize power consumption, making it ideal where in-line power loss is critical. It is available in a SuperSOT-6 package, which offers a small footprint and low profile.
The document provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, dynamic parameters, and switching characteristics. It also includes typical performance graphs, dimensional outlines, and ordering information for the device.
| Package Type | SuperSOT-6 |
|---|
The MOSFET operates and stores within a junction temperature range of -55 to +150 °C.
The maximum steady-state power dissipation is 1.6 W when mounted on a minimum pad of 2 oz copper.