FDC655BN is a N-channel logic level MOSFET from Fairchild Semiconductor with extremely low RDS(on), fast switching and low gate charge.
This document is a technical datasheet for the Fairchild Semiconductor FDC655BN, an N-channel logic-level power MOSFET manufactured using the advanced PowerTrench process. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications requiring fast switching and low in-line power loss.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (ID) | 6.3 A |
| Power Dissipation (Ta=25°C) | 1.6 W |
| Package Type | SuperSOT-6™ |
| On Resistance (VGS=10V, ID=6.3A) | 25 mΩ |
| Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current at Ta = 25°C is 6.3 A.
Yes, the termination is Lead-free and RoHS Compliant.