FDC640P is a rugged 2.5V P-channel MOSFET using a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
This document is a datasheet for the FDC640P, a P-Channel 2.5V specified MOSFET utilizing Fairchild's PowerTrench process. It is optimized for power management applications such as battery management, load switching, and battery protection, featuring a wide gate drive voltage range from 2.5V to 12V.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | ±12 V |
| Drain Current (Continuous) | -4.5 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 78 °C/W |
| Thermal Resistance, Junction-to-Case | 30 °C/W |
| Drain-Source On-Resistance @ VGS = -4.5V | 0.053 Ω |
| Drain-Source On-Resistance @ VGS = -2.5V | 0.080 Ω |
The device is optimized for power management applications including battery management, load switch, and battery protection.
The MOSFET has a wide range of gate drive voltage from 2.5V to 12V.
The maximum continuous drain current is -4.5 A.