This document describes the FDC6401N Dual N-Channel MOSFET, which is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
The document describes the Fairchild FDC6401N, a Dual N-Channel MOSFET optimized for low gate charge, low Rds(on), and fast switching speed. It is specifically designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers.
| Drain-Source Voltage (Vdss) | 20 V |
|---|---|
| Gate-Source Voltage (Vgss) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Vgs(th)) | 0.5 to 1.5 V |
| Static Drain-Source On-Resistance (Rds(on)) | 70 mΩ @ Vgs=4.5V, Id=3.0A |
| Total Gate Charge (Qg) | 3.3 nC |
The device is designed for use in DC/DC converters, battery protection circuits, and power management systems.
The maximum continuous drain current (Id) is rated at 3.0 A.
The device operates and stores within a junction temperature range of -55 to +150 °C.