FDC653N is a Fairchild N-channel enhancement mode power field effect transistor, manufactured using Fairchild's proprietary high cell density DMOS technology. It is particularly suitable for low voltage applications in notebook computers, portable phones, PCMICA cards and other battery powered circuits where fast switching and low in-line power loss are required in a very small outline surface mount package.
This document is a datasheet for the Fairchild Semiconductor FDC653N, an N-Channel enhancement mode power field effect transistor. The device is produced using Fairchild's proprietary, high cell density, DMOS technology to minimize on-state resistance. It is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
| Package Type | SuperSOT-6 |
|---|
The device supports a continuous drain current of 5 A and has a maximum power dissipation of 1.6 W.
The device operates and can be stored within a temperature range of -55 to 150 °C.
The absolute maximum drain-source voltage for this component is 30 V.