FDC6420C is a 20V N & P-Channel MOSFET produced by Fairchild Semiconductor using advanced PowerTrench process. The device has extremely low RDS(ON) and superior switching performance. It is packaged in SuperSOT-6 with 72% smaller footprint and 1mm thickness.
The document describes the Fairchild Semiconductor FDC6420C, a pair of N- and P-Channel MOSFETs produced using the PowerTrench process. These devices are designed to offer exceptional power dissipation in a very small SuperSOT-6 footprint, making them suitable for applications where larger packages like SO-8 are impractical. Key applications include DC/DC converters, load switches, and LCD display inverters.
The datasheet details absolute maximum ratings, electrical characteristics, and thermal properties for both the N-Channel (Q1) and P-Channel (Q2) devices. It includes specific data for the 20V rating, on-state resistance, gate charge, and capacitance. Typical characteristics are presented through various graphs illustrating on-region behavior, temperature variations, transfer characteristics, and safe operating areas.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +/- 12 V |
| On-Resistance (Q1) @ 4.5V | 70 mOhm |
| On-Resistance (Q2) @ 4.5V | 125 mOhm |
| Operating Junction Temperature | -55 to +150 °C |
| Package Type | SuperSOT-6 |
The device is designed for use in DC/DC converters, load switches, and LCD display inverters.
The SuperSOT-6 package has a small footprint that is 72% smaller than an SO-8 package.
The operating and storage junction temperature range is from -55 to +150 °C.