This document describes a P-Channel 2.5V PowerTrench MOSFET product produced using Fairchild Semiconductor's advanced process. It has low on-state resistance and low gate charge, making it suitable for battery power applications including load switching and power management, battery charging circuits, and DC/DC conversion.
The document describes the Fairchild FDC638P, a P-Channel MOSFET produced using the PowerTrench process. It is specifically tailored for battery power applications, including load switching, power management, battery charging circuits, and DC/DC conversion. The device features a SuperSOT-6 package with a small footprint and low profile.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Operating Temperature Range | -55 to +150 °C |
| Gate Charge | 10 nC typical |
| Package Type | SuperSOT-6 |
The device is well suited for battery power applications such as load switching, power management, battery charging circuits, and DC/DC conversion.
The maximum continuous drain current is -4.5 A.
The FDC638P uses the SuperSOT-6 package.