FDC654P is a P-channel logic level MOSFET produced by Fairchild, suitable for battery power management applications. It features low RDS(ON), low gate charge and high performance trench technology.
The document describes the Fairchild Semiconductor FDC654P, a Single P-Channel Logic Level PowerTrench® MOSFET. It is produced using Fairchild's advanced PowerTrench process and has been optimized for battery power management applications such as load switches and battery protection circuits.
Key features include a continuous drain current of -3.6A at 25°C, a breakdown voltage of -30V, and low gate charge (6.2 nC typical). The device utilizes high performance trench technology to achieve extremely low on-resistance.
| Drain-Source Voltage (Vdss) | -30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Vgs(th)) | -1 to -3 V |
| Total Gate Charge (Qg) | 6.2 nC |
The device supports a continuous drain current of -3.6 A.
The component operates and stores within a range of -55 to +150 °C.
It has a typical low gate charge of 6.2 nC.