FDC658P is a P-Channel Logic Level MOSFET produced by Fairchild Semiconductor. It has extremely low RDS(ON) and low gate charge and is well suited for notebook computer applications such as load switching and power management, battery charging circuits and DC/DC conversion.
This document is a technical datasheet for the Fairchild Semiconductor FDC658P, a Single P-Channel, Logic Level, PowerTrench™ MOSFET. The device utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge, making it suitable for notebook computer applications such as load switching and power management circuits.
| Drain-Source Voltage | -30 V |
|---|---|
| Continuous Drain Current | -4 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Temperature Range | -55 to 150 °C |
| Total Gate Charge (Typ) | 8 nC |
These devices are well suited for notebook computer applications, including load switching and power management.
The SuperSOT-6 package has a small footprint that is 72% smaller than standard SO-8.