Industrial

This document is a technical manual for Fairchild Semiconductor Corporation's FDG1024NZ Dual N-Channel Power Trench® MOSFET

FDG327N is a N-Channel MOSFET from Fairchild Corporation. It has a very low RDS(ON) and gate charge, making it ideal for use in small switching power supplies.

The FDG327NZ 20V N-Channel PowerTrench™ MOSFET is a product from Fairchild Semiconductor Corporation. It is mainly used in DC/DC converters, power management and load switches. This product has low RDS(ON), low gate charge, high performance and high power.

The FDG328P is a P-channel MOSFET produced by Fairchild Semiconductor. It features a 2.5V gate drive voltage, a maximum current of 1.5A and a maximum drain-source voltage of -20V. It uses Fairchild Semiconductor's advanced PowerTrench process, which provides low gate charge, high performance trench technology and a compact SC70-6 surface mount package.

FDG330P is a P-Channel 1.8V specified PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge and extremely low RDS(ON), which is suitable for battery management applications.

The FDG410NZ is a single N-channel power MOSFET with an extremely low rDS(on) and gate charge (Qg) that is optimized for use in small switching regulators, DC/DC converters, power management and load switches.

The FDG6301N is a dual N-channel digital field effect transistor with a maximum voltage of 25 V and a maximum current of 0.22 A. It features a low threshold voltage, high density process, and compact package, making it ideal for low voltage applications.

FDG6303N is a dual N-channel digital field-effect transistor with symmetrical pinouts and low voltage application characteristics.

This document describes the features and characteristics of the FDG6304P Dual P-Channel, Digital FET released in July 1999.

This document describes the features and characteristics of the FDG6308P P-Channel MOSFET, which is suitable for battery management and load switch applications.

This document describes the features and characteristics of the FDG6316P P-Channel 1.8V MOSFET product produced by Fairchild Semiconductor Corporation in 2001. It is suitable for applications such as battery management and load switches.

FDG6317NZ is a dual N-channel MOSFET with extremely low RDS(ON), and it is suitable for applications such as DC/DC converters, power management and load switches.

FDG6318P is a dual P-Channel logic level enhancement mode MOSFET produced by Fairchild Semiconductor using the PowerTrench process, with a small resistance, suitable for low voltage applications

This is a document about FDG6318PZ dual P-channel digital enhancement mode MOSFET. The product features low on-state resistance and low gate drive requirements, suitable for battery management and other applications.