Industrial

KSC1008 is a NPN type transistor produced by FAIRCHILD SEMI. Its features are low frequency amplifier, medium speed switching, collector-base voltage VCBO is 80V, collector current IC is 700mA, and collector power dissipation PC is 800mW.

KSC1623 is a NPN transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is 60 V, maximum collector-emitter voltage is 50 V, maximum emitter-base voltage is 5 V, maximum collector current is 100 mA, maximum power is 200 mW, maximum junction temperature is 150 °C, and working temperature range is -55 ~ 150 °C. Its rated DC current gain is 90 ~ 600.

KSC1815 is a NPN type transistor released by Fairchild Semiconductor Corporation. Its package type is TO-92. This transistor has a high rated voltage and current, and is suitable for audio frequency amplifiers and high frequency oscillators.

The KSC1845 is a NPN type transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is 120V, maximum collector-emitter voltage is 120V, maximum emitter-base voltage is 5V, maximum collector current is 50mA, maximum base current is 10mA, maximum collector power dissipation is 500mW, and maximum junction temperature is 150°C. Storage temperature range is -55~150°C.

The KSC2316 is a NPN type silicon transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage can reach 120 V, and its maximum collector-emitter saturation voltage can reach 1 V. This tube is suitable for audio power amplifier applications, such as driver stage amplifier and KSA916 complement.

KSC2328A is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is 30V, maximum collector-emitter voltage is 30V, maximum emitter-base voltage is 5V, maximum collector current is 2A, maximum collector power dissipation is 1W, maximum junction temperature is 150℃, and maximum storage temperature is -55℃ to 150℃.

The KSC2330 is a NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor Corporation. It has the following features: maximum collector-emitter voltage 300V, maximum collector-base voltage 300V, maximum emitter-base voltage 7V, maximum collector current 100mA, maximum collector power dissipation 1W, maximum junction temperature 150°C, storage temperature range -55~+150°C.

The KSC2331 is a NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation with low frequency amplifier and medium speed switching function, it can complement KSA931, with rated maximum collector-base voltage 80V, collector current 700mA and collector power dissipation 1W.

The KSC2383 is a NPN type transistor from Fairchild Semiconductor Corporation. Its maximum rated voltage is 160V, maximum rated current is 1A, and maximum rated power is 900mW. Its typical operating temperature is -55°C to 150°C.

This document provides the absolute maximum ratings and electrical characteristics of the KSC3265 NPN epitaxial silicon transistor. It features a collector-base voltage of 30V, a collector-emitter voltage of 25V, an emitter-base voltage of 5V, and a collector current of 800mA.

KSC5019 is a low saturation NPN silicon transistor with a maximum collector-emitter saturation voltage of 0.5V and a maximum collector-emitter breakdown voltage of 10V.

KSC815 is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. Its package is TO-92, with a rated power of 400mW and a rated voltage of 60V. The transistor has the function of low frequency amplifier and high frequency oscillator.

The KSC945 is a NPN Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base reverse voltage is 60V, collector-emitter maximum voltage is 50V, emitter-base maximum voltage is 5V, maximum collector current is 150mA, maximum collector power dissipation is 250mW, maximum junction temperature is 150℃, and storage temperature range is -55~150℃.

KSD261 is an NPN type integrated circuit produced by Fairchild Semiconductor Corporation. Its maximum collector current is 500mA, maximum collector-emitter voltage is 20V, maximum emitter-base voltage is 5V, maximum collector-base voltage is 40V.