Industrial

This is a technical document about KSD5041, an NPN Epitaxial Silicon Transistor with low VCE (sat) and high performance.

This document describes the absolute maximum ratings and electrical characteristics of the KSH44H11 NPN epitaxial silicon transistor. The transistor features a collector-emitter voltage of 80V, a collector current of 8A, and a collector dissipation of 1.75W.

This document provides information on the absolute maximum ratings and electrical characteristics of the KSP05/06 NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation. The transistor has high voltage and power dissipation capabilities and is a complement to the KSP55/56.

The KSD1616/1616A is an audio frequency power amplifier and medium speed switching device, with a rated voltage of 60V and 120V and a rated current of 1A and 2A.

This document is a datasheet for the KSP2222A NPN General Purpose Amplifier. The features of this product include a collector-emitter voltage of 40V and a collector power dissipation of 625mW.

KSP2907A is a PNP general purpose amplifier produced by Fairchild Semiconductor Corporation. Its characteristics are collector-emitter voltage VCEO= 60V, collector power dissipation PC (max)=625mW. The chip has two packages with and without “-C”. The package with “-C” is the center collector and the package without “-C” is the side collector. The chip's model is PN2907A.

KSP42/43 is a NPN type high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 300V and its maximum collector-emitter power dissipation is 625mW.

KSP44/45 is a high voltage transistor produced by Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is 400V, the maximum collector-base voltage is 500V, and the maximum emitter-base voltage is 6V.

This document presents the absolute maximum ratings and electrical characteristics of the KSP55/56 PNP Epitaxial Silicon Transistors produced by Fairchild Semiconductor Corporation. It includes the maximum voltage, current, power dissipation, temperature ratings of the device, as well as the breakdown voltage of collector-emitter, breakdown voltage of emitter-base, collector cut-off current, collector-emitter saturation voltage, base-emitter on voltage, current gain bandwidth, and other electrical characteristics.

This datasheet provides the specifications of KSP92/93, including voltage, current, power, temperature, etc.

The KSP94 is a high voltage PNP type transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -400V, maximum collector-base voltage is -400V, maximum emitter-base voltage is -6V, maximum collector current is -300mA, maximum collector power dissipation is 625mW, maximum junction temperature is 150°C, and maximum storage temperature is -55~150°C.

KST05/06 is an NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 60V, maximum collector-emitter saturation voltage is 0.25V, maximum emitter-base voltage is 4V, maximum collector current is 500mA, and maximum power consumption is 350mW. The package type is SOT-23.

The KST2222A is a NPN type transistor, with a maximum collector-emitter voltage of 40V, a maximum collector-emitter reverse voltage of 75V, a maximum emitter-base voltage of 6V, a maximum collector current of 600mA, and a maximum collector power dissipation of 350mW.

KST2907A is a PNP type NPN transistor manufactured by Fairchild Semiconductor Corporation. Its maximum current is -600mA, maximum power is 350mW, and working temperature range is -55~150℃.

This document describes the features and characteristics of the KST3904 NPN Epitaxial Silicon Transistor.