This document provides the absolute maximum ratings and electrical characteristics of the KSC3265 NPN epitaxial silicon transistor. It features a collector-base voltage of 30V, a collector-emitter voltage of 25V, an emitter-base voltage of 5V, and a collector current of 800mA.
This document provides the design specifications for the KSC3265, a low-frequency NPN epitaxial silicon transistor. It serves as a complement to the KSA1298 model and is housed in an SOT-23 package. The datasheet includes absolute maximum ratings, electrical characteristics, and classification data.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 25 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | 800 mA |
| Base Current | 160 mA |
| Collector Power Dissipation | 200 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
The KSC3265 is available in an SOT-23 package.
Yes, the KSC3265 is described as a complement to the KSA1298.
The maximum junction temperature is 150 °C.