Industrial

KST3906 is a PNP type silicon transistor produced by Fairchild company, its maximum collector-base voltage is -40V, maximum collector-emitter voltage is -40V, maximum emitter-base voltage is -5V, maximum collector current is -200mA, maximum collector power dissipation is 350mW, maximum storage temperature is 150 ℃.

KST4401 is a NPN type transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 40V, maximum collector-base voltage is 60V, maximum emitter-base voltage is 6V, maximum collector current is 600mA, maximum collector power dissipation is 350mW, and storage temperature is 150℃.

This document provides the absolute maximum ratings and electrical characteristics of the KST4403 PNP epitaxial silicon transistor. It includes information on its operating voltages, currents, power dissipation, and temperature range. Additionally, it provides details on its basic parameters such as collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, base cutoff current, collector cutoff current, DC current gain, saturation voltage, current gain bandwidth product, output capacitance, and turn-on/off times.

This manual provides the characteristics and usage information for the KST5086/5087 low noise PNP transistors.

The KST5401 is a PNP type high voltage transistor produced by Fairchild Semiconductor Corporation. It has a maximum collector-base voltage of -160V, a maximum collector-emitter voltage of -150V, a maximum emitter-base voltage of -5V, a maximum collector current of -500mA and a maximum collector power dissipation of 350mW. It can operate at a storage temperature of 150℃.

KST55/56 is a PNP transistor produced by Fairchild. Its maximum collector-emitter voltage is -60V/-80V, maximum collector-emitter saturation voltage is -60V/-80V, maximum collector current is -500mA, maximum collector power dissipation is 350mW, and maximum operating temperature is 150℃. Its package form is SOT-23.

This document provides the absolute maximum ratings and electrical characteristics of the KST5550 NPN epitaxial silicon transistor introduced by Fairchild Semiconductor Corporation in 2002. The transistor features high voltage capability and high DC current gain.

KST5551 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 160V, maximum collector current is 600mA, and maximum power dissipation is 350mW.

KST92/KST93 is a PNP type transistor produced by FAIRCHILD, which has high voltage, high current, wide SOA characteristics.

MMBT2222AT is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. It is a general purpose amplifier transistor and is suitable for all types of ultra-small surface mount packages. It can also be used for general switching and amplification applications.

MMBT2369 / PN2369 is a NPN switching transistor produced by Fairchild Semiconductor Corporation. The feature of this transistor is that it can achieve high speed saturated switching at collector currents of 10mA to 100mA.

PN2369A MMBT2369A is a NPN switching transistor produced by Fairchild, suitable for saturated switching currents of 10 mA to 100 mA

PN2484/MMBT2484 is a Fairchild NPN general purpose amplifier with low noise and high gain, suitable for current range from 1µA to 50mA.

PN3640 is a PNP transistor designed for very high speed saturated switching at collector currents to 100 mA.