KSD261 is an NPN type integrated circuit produced by Fairchild Semiconductor Corporation. Its maximum collector current is 500mA, maximum collector-emitter voltage is 20V, maximum emitter-base voltage is 5V, maximum collector-base voltage is 40V.
This document is a technical datasheet for the Fairchild Semiconductor KSD261 NPN epitaxial silicon transistor. It serves as a complement to the KSA643 model and provides comprehensive design specifications for product development.
The datasheet outlines absolute maximum ratings, including collector power dissipation of 500mW and junction temperatures up to 150°C. It also details electrical characteristics such as DC current gain ranging from 120 to 400 and breakdown voltages for various terminals.
| Collector Power Dissipation | 500 mW |
|---|---|
| Junction Temperature | 150 °C |
| Collector-Base Voltage | 40 V |
| Collector-Emitter Voltage | 20 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | 500 mA |
No, Fairchild products are not authorized for use as critical components in life support devices without express written approval.
The device has a maximum collector power dissipation of 500 mW and a maximum junction temperature of 150 °C.
The minimum DC current gain (hFE) is 120 when tested at a collector-emitter voltage of 5 V and a collector current of 0.1 A.
The maximum collector-base breakdown voltage (BVcbo) is 40 V when the collector current is 100 pA and the emitter current is 0.