KSC1623 is a NPN transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is 60 V, maximum collector-emitter voltage is 50 V, maximum emitter-base voltage is 5 V, maximum collector current is 100 mA, maximum power is 200 mW, maximum junction temperature is 150 °C, and working temperature range is -55 ~ 150 °C. Its rated DC current gain is 90 ~ 600.
This document provides the design specifications for the Fairchild KSC1623, an NPN epitaxial silicon transistor intended for low frequency amplifier and high frequency applications. It serves as a complement to the KSA812 model.
The datasheet outlines the absolute maximum ratings, including a collector-base voltage of 60V and a collector power dissipation of 200mW. It also lists key electrical characteristics such as DC current gain (hFE) ranging from 90 to 600 and a current gain bandwidth product of 250 MHz. Package dimensions for the SOT-23 format are included.
| Collector-Base Voltage | 60 V |
|---|---|
| Collector-Emitter Voltage | 50 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | 100 mA |
| Collector Power Dissipation | 200 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
No, Fairchild's products are not authorized for use as critical components in life support devices without express written approval.
The maximum collector current is 100 mA.
The maximum junction temperature is 150 °C.