The KSC2331 is a NPN Epitaxial Silicon Transistor from Fairchild Semiconductor Corporation with low frequency amplifier and medium speed switching function, it can complement KSA931, with rated maximum collector-base voltage 80V, collector current 700mA and collector power dissipation 1W.
This document is a technical datasheet for the Fairchild KSC2331, an NPN epitaxial silicon transistor. It provides comprehensive specifications including collector current up to 700mA and a high collector-base voltage of 80V.
The text details absolute maximum ratings such as junction temperature limits and storage temperatures, alongside electrical characteristics like DC current gain ranges (40 to 240) and saturation voltages. It also includes typical performance characteristics graphs for static behavior, power dissipation, and safe operating areas.
| Collector-Base Voltage (Vceo) | 80 V |
|---|---|
| Collector Current (Ic) | 700mA |
| Collector Power Dissipation (Po) | 1 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 to 150 °C |
The DC current gain (hFE) ranges from a minimum of 40 to a maximum of 240.
The transistor uses a TO-92L package.