Industrial

FJX3904 is an NPN epitaxial silicon transistor used for general purposes. It has a collector-base voltage of 60V, collector-emitter voltage of 40V, and emitter-base voltage of 6V. It also has a collector current of 200mA and collector power dissipation of 350mW.

This document describes the absolute maximum ratings and electrical characteristics of the FJX3906 PNP epitaxial silicon transistor. It provides the maximum rated values for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector power dissipation, and storage temperature. In addition, it provides the electrical characteristics for collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, DC current gain, collector-emitter saturation voltage, base-emitter saturation voltage, current gain bandwidth product, output capacitance, noise figure, turn on time, and turn off time.

This document describes the absolute maximum ratings and electrical characteristics of the FJX733 PNP epitaxial silicon transistor, including voltage, current, power, etc. The transistor is suitable for low frequency amplifier applications.

FJX945 is a NPN type silicon transistor produced by Fairchild Semiconductor Corporation. It has the characteristics of high collector-base voltage VCBO=60V and high current gain bandwidth product fT=300MHz (typ).

This product is a PNP audio frequency low noise amplifier with high voltage and high hFE.

This document is the FMB100 spec, which introduces the characteristics and parameters of the product

FMBA06 is a NPN multi-chip general purpose amplifier produced by Fairchild Semiconductor. Its absolute maximum ratings are: collector-emitter voltage is 80V, collector-base voltage is 80V, emitter-base voltage is 4.0V, collector current is 500mA, and working temperature range is -55 to +150°C.

FMBA14 is a NPN Multi-Chip Darlington Transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 30V, maximum collector-base voltage is 30V, maximum emitter-base voltage is 10V, maximum collector current is 1.2A, and operating temperature range is -55 to +150 degrees C.

FMBM5401 PNP General Purpose Amplifier is a product of Fairchild Semiconductor Corporation. The maximum collector-emitter voltage is -150 V, the maximum collector-base voltage is -160 V, the maximum emitter-base voltage is -5.0 V, and the maximum collector current is -600 mA. The operating temperature range is -55 ~ 150 °C.

FMBM5551 NPN General Purpose Amplifier is a dual NPN transistor from Fairchild Semiconductor Corporation. Its maximum power dissipation is 350mW, maximum collector-emitter voltage is 160V, maximum collector-base voltage is 180V, maximum emitter-base voltage is 6V, maximum collector current is 600mA.

FMBS2383 is an NPN Epitaxial Silicon Transistor with Power Amplifier features. Its maximum collector-emitter voltage is 160V and maximum frequency gain bandwidth product is 120MHz.

FMMT449 NPN Low Saturation Transistor is a high current gain, low saturation voltage NPN transistor from Fairchild. The device has a maximum collector current of 2A continuous and a maximum collector-emitter voltage of 50V.

FMMT549 is a PNP low saturation transistor produced by Fairchild Semiconductor Corporation. It features high current gain and low saturation voltage, with collector currents up to 2A.

This document is about the characteristics of FSB560/FSB560A NPN Low Saturation Transistor. The device has a high current gain and low saturation voltage, and the collector current can reach 2A.