Industrial

This datasheet lists the absolute maximum ratings, thermal characteristics, small signal characteristics and other information for the FSB619 NPN Low Saturation Transistor.

The FSB649 SuperSOTTM-3 is an NPN low saturation transistor designed with high current gain and low saturation voltage, capable of continuous collector currents up to 3A.

FSB660 / FSB660A are PNP low saturation transistors designed with high current gain and low saturation voltage, with a continuous collector current of up to 2A.

The FSB749 is a PNP low saturation transistor from Fairchild Semiconductor Corporation. It has high current gain and low saturation voltage, and its collector current can reach 3A.

FZT3019 is an NPN general purpose amplifier designed for medium power amplifiers and switches, with a maximum collector current of 500mA and a maximum collector voltage of 80V.

FZT649 is a NPN low saturation transistor produced by Fairchild Semiconductor Corporation, with high current gain and low saturation voltage, the collector current can reach 3A continuous

This document describes the features and characteristics of the FZT749 PNP Low Saturation Transistor, released in July 1998, including high current gain, low saturation voltage, and continuous collector currents up to 3A.

KSA1015 is a PNP type silicon transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -50V, maximum collector-emitter reverse voltage is -50V, maximum collector-base reverse voltage is -5V, maximum collector current is -150mA, maximum base current is -50mA, maximum collector power dissipation is 400mW, maximum junction temperature is 125℃, minimum storage temperature is -65℃, and maximum storage temperature is 150℃.

This document presents the absolute maximum ratings and electrical characteristics of the KSA1182 PNP Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. The transistor is suitable for low-frequency power amplifiers and complements the KSC2859. The document provides information on the transistor's maximum rated voltage, maximum power dissipation, junction temperature, and storage temperature, among others. Typical curves for static characteristics, DC current gain, base-emitter saturation voltage, and collector output capacitance are also included.

KSA1281 is an audio power amplifier with a collector power dissipation of 1W and a 3 watt output application. The absolute maximum ratings include collector power dissipation, junction temperature, storage temperature, etc. The electrical characteristics include collector-base breakdown voltage, collector-emitter breakdown voltage, emitter-base breakdown voltage, collector cut-off current, emitter cut-off current, DC current gain, base-emitter saturation voltage, etc.

This document provides the absolute maximum ratings and electrical characteristics of the KSA1298 PNP epitaxial silicon transistor. The transistor is a low frequency power amplifier and is complementary to the KSC3265.

This document is about the absolute maximum ratings, electrical characteristics, classification, symbol, parameter, test condition, minimum value, typical value and maximum value of KSA539 PNP Epitaxial Silicon Transistor.

KSA643 is a PNP type low frequency power amplifier from Fairchild Semiconductor Corporation. It has a maximum collector current of 500mA, a maximum collector-emitter reverse voltage of -40V and a maximum emitter-base reverse voltage of -20V. The device is packaged in a TO-92 package and has a working temperature range of -55~150℃.

KSA708 is an NPN type silicon transistor, has the characteristics of low frequency amplifier and medium speed switching. The tube has -80V collector-base breakdown voltage, 800mW collector power dissipation, -0.7V collector-emitter saturation voltage and -1.1V base-emitter saturation voltage.

This document presents the absolute maximum ratings and electrical characteristics of the KSA733 PNP Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor Corporation. The transistor is designed for low-frequency amplifier applications and features collector-base voltage, collector-emitter voltage, and emitter-base voltage, among others.