KSC1008 is a NPN type transistor produced by FAIRCHILD SEMI. Its features are low frequency amplifier, medium speed switching, collector-base voltage VCBO is 80V, collector current IC is 700mA, and collector power dissipation PC is 800mW.
The document details the Fairchild Semiconductor KSC1008, an NPN epitaxial silicon transistor designed for low frequency amplifier and medium speed switching uses. It features a high collector-base voltage of 80V and supports a collector current up to 700mA with power dissipation of 800mW.
The datasheet covers electrical characteristics including breakdown voltages, current gain classifications (R, O, Y, G), saturation voltages, and frequency response. It also provides ordering information for various package suffixes indicating pin configurations (Center Collector vs Side Collector) and packaging methods such as Bulk or Tape & Reel.
| Collector-Base Voltage (VCBO) | 80 V |
|---|---|
| Collector Current (IC) | 700 mA |
| Collector Power Dissipation (PC) | 800 mW |
| Junction Temperature (TJ) | +150 °C |
| Storage Temperature (Tstg) | -55 ~ +150 °C |
| Current Gain Bandwidth Product (fT) | 30 to 50 MHz |
| Output Capacitance (Cob) | 8 pF |
The suffix "-C" indicates a Center Collector configuration (Pin 1: Emitter, Pin 2: Collector, Pin 3: Base), while no suffix indicates a Side Collector configuration (Pin 1: Emitter, Pin 2: Base, Pin 3: Collector).
The KSC1008 supports a collector current of up to 700mA.
The device has a maximum junction temperature (TJ) rating of +150 °C.