Industrial

The MMBT3646 is a bipolar junction transistor manufactured by Fairchild Semiconductor. The transistor has a VCEO of 15 V, a VCES of 40 V, a VCBO of 40 V, and a VEBO of 5 V. It can withstand a maximum current of 300 mA and a maximum power of 625 mW. The transistor's rated operating temperature is 150°C.

The MMBT3904SL is a NPN type transistor produced by Fairchild Semiconductor Corporation. It is suitable for general switching and amplification and has a maximum package height of 0.43mm. It can be used as a complementary type of PNP MMBT3906SL

The MMBT3904T is an NPN type transistor produced by Fairchild Semiconductor Corporation. It is suitable for general amplification, switching and amplification applications.

This document describes the features and characteristics of the MMBT3906SL PNP epitaxial silicon transistor, which is suitable for general amplification and switching applications, especially for portable devices. It is recommended to use it in conjunction with the complementary NPN model MMBT3904SL.

D45C8 is a PNP power amplifier with a collector-emitter voltage of -60V and a collector current of -4.0A.

D45H2A is a PNP power amplifier designed for power amplifier, regulator and switching circuits where speed is important.

This is the datasheet of FFB5551

FJMA790 is a PNP epitaxial silicon transistor for load management in portable applications. It features high collector current and low collector-emitter saturation voltage.

FJT44 is a high voltage NPN type transistor. Its features are: 1. Collector-Emitter voltage range is 400V. 2. Collector-Emitter current range is 300mA. 3. Working temperature range is -55 to +150°C.

This document describes the absolute maximum ratings and electrical characteristics of the FJV1845 NPN epitaxial silicon transistor. The transistor has a collector-base voltage and collector-emitter voltage of up to 120V, and a maximum collector current of 50mA. Additionally, the transistor features high gain and low saturation voltage.

FJV42 is a NPN high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 350V, maximum collector-emitter current is 500mA, maximum collector-base current is 100uA, maximum emitter-base voltage is 6V, and maximum collector power dissipation is 350mW.

The FJV992 is a PNP type silicon transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -120V, maximum collector-base voltage is -120V, maximum emitter-base voltage is -5V, maximum collector current is -50mA, maximum collector power dissipation is 300mW, maximum junction temperature is 150°C, and maximum storage temperature is -55~150°C.

FJX1182 is a low frequency power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is -35V, maximum collector-emitter voltage is -30V, maximum emitter-base voltage is -5V, maximum collector current is -500mA, maximum collector power dissipation is 150mW, and maximum junction temperature is 150°C. The storage temperature range is -55~150°C.

FJX2222A — NPN Epitaxial Silicon Transistor is a 600 mA NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. It has a maximum collector-emitter voltage of 40V and a maximum collector power dissipation of 325 mW.

FJX2907A is a PNP type transistor produced by Fairchild Semiconductor. Its maximum collector-emitter voltage is -60V, maximum collector-base voltage is -60V, maximum emitter-base voltage is -5V, maximum collector current is -600mA, maximum collector power dissipation is 325mW, and maximum storage temperature is 150°C.