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This document describes the features and characteristics of the MMBT5550 NPN general purpose amplifier, which is designed for high voltage amplifiers and gas discharge display drivers.
This document describes the features and characteristics of the 2N5771 and MMBT5771 PNP switching transistors, designed for very high-speed saturated switching with a maximum collector current of 100mA.
This document describes the features and characteristics of the 2N5962/MMBT5962, a discrete POWER & Signal Technologies NPN General Purpose Amplifier. It is designed for low noise, high gain, general purpose amplifiers that require collector currents up to 50mA. The device has an operating and storage junction temperature range of -55 to +150 degrees Celsius.
MMPQ2222 is a transistor produced by Fairchild Semiconductor Corporation. Its maximum current is 500mA, its maximum collector-emitter voltage is 30V, its maximum collector-base voltage is 60V, and its maximum emitter-base voltage is 5.0V.
This document provides information on the parameters and characteristics of the MMPQ2907 model, including voltage, current, temperature range, etc. This device is designed for general purpose amplifiers and switches requiring collector currents up to 500mA.
This document describes four general purpose amplifiers that can be used in switches with collector currents of 10 µA to 100 mA. These devices are best used when space is the primary consideration. Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
The MPS751 is a silicon PNP transistor manufactured by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is -60V, maximum collector current is 2A, and maximum collector dissipation is 625mW. Its package is SOT-223.
The NZT560/NZT560A is an NPN low saturation transistor with high current gain and low saturation voltage, capable of continuous collector currents up to 3A.
The NZT651 is a NPN power driver transistor from Fairchild Semiconductor Corporation. It has a maximum collector-emitter voltage of 60V, a maximum collector-base voltage of 80V, a maximum emitter-base voltage of 5.0V, a maximum collector current of 4.0A, and a working temperature range of -55 to +150°C.
NZT660/NZT660A is a PNP low saturation transistor produced by Fairchild Semiconductor Corporation. This transistor has a collector current of up to 3A and features high current gain and low saturation voltage.
The TN6714A is a NPN general purpose amplifier from Fairchild Semiconductor Corporation. This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A.
TN6715A is a NPN General Purpose Amplifier produced by Fairchild Semiconductor Corporation, suitable for general purpose medium power amplifiers and switches requiring a collector current of 1.2 A
