The KSC945 is a NPN Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base reverse voltage is 60V, collector-emitter maximum voltage is 50V, emitter-base maximum voltage is 5V, maximum collector current is 150mA, maximum collector power dissipation is 250mW, maximum junction temperature is 150℃, and storage temperature range is -55~150℃.
This document is a datasheet for the Fairchild Semiconductor KSC945, an NPN epitaxial silicon transistor designed for audio frequency amplification and high-frequency oscillation. It serves as a complement to the KSA733 model. The device features a center collector configuration when the suffix 'C' is used, with a pinout of Emitter, Collector, and Base for the TO-92 package.
| Collector-Base Voltage | 60 V |
|---|---|
| Collector-Emitter Voltage | 50 V |
| Emitter-Base Voltage | 5 V |
| Collector Current | 150 mA |
| Collector Power Dissipation | 250 mW |
| Junction Temperature | 150 °C |
| Storage Temperature | -55 ~ 150 °C |
| Current Gain Bandwidth Product | 300 MHz |
The maximum collector power dissipation is 250 mW.
The maximum junction temperature is 150 °C.
The typical current gain bandwidth product is 300 MHz.