KSC815 is a NPN epitaxial silicon transistor produced by Fairchild Semiconductor Corporation. Its package is TO-92, with a rated power of 400mW and a rated voltage of 60V. The transistor has the function of low frequency amplifier and high frequency oscillator.
This document is a technical datasheet for the Fairchild Semiconductor KSC815, an NPN epitaxial silicon transistor designed as a low-frequency amplifier and high-frequency oscillator. It serves as a complement to the KSA539 device.
The datasheet provides absolute maximum ratings, electrical characteristics including DC current gain and breakdown voltages, typical performance curves, package dimensions for the TO-92 case, and trademark information.
| Collector-Base Voltage (Vocpo) | 60 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | 45 V |
| Emitter-Base Voltage (VeBo) | 5 V |
| Collector Current (lo) | 200 mA |
| Collector Power Dissipation (Po) | 400 mW |
| Junction Temperature (Ty) | 150 °C |
The device supports a maximum collector-base voltage of 60 V and can dissipate up to 400 mW.
The package height is 3.60 mm and the lead spacing is 1.27 mm.