KSC5019 is a low saturation NPN silicon transistor with a maximum collector-emitter saturation voltage of 0.5V and a maximum collector-emitter breakdown voltage of 10V.
This document provides technical specifications for the Fairchild KSC5019, an NPN epitaxial silicon transistor. It lists absolute maximum ratings such as collector current up to 2A DC and junction temperature of 150°C.
The datasheet includes electrical characteristics like current gain (hFE) ranging from 70 to 600 depending on the classification (L, M, N, or P), along with typical performance curves for saturation voltage, power dissipation, and safe operating areas.
| Collector-Base Voltage (Vocbo) | 30 V |
|---|---|
| Collector-Emitter Voltage (Voces) | 30 V |
| Emitter-Base Voltage (VeBo) | 6 V |
| Collector Current (DC) (Io) | 2 A |
| Junction Temperature (Tj) | 150 °C |
| Collector-Emitter Saturation Voltage (Voce(sat)) | Max. 0.5 V |
| Current Gain Bandwidth Product (fr) | 150 MHz |
There are four classifications: L, M, N, and P.
The device supports a DC collector current of up to 2 A and a collector power dissipation of 750 mW.
The maximum allowed junction temperature is 150 °C.
When operating with a 2 A current and 50 mA base drive, the collector-emitter saturation voltage is up to 0.5 V.