Industrial

The BC517 is an NPN Darlington transistor designed for applications requiring extremely high current gain up to 1.0A.

The BCV26 is a PNP Darlington transistor from Fairchild Semiconductor Corporation. This device is designed for applications requiring extremely high current gain at currents to 800 mA.

This document describes the features and characteristics of the BCV27 NPN Darlington transistor, designed for applications requiring extremely high current gain with a maximum collector current of 1.0A.

BSP50 is a NPN transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 45V, maximum collector-base voltage is 60V, maximum emitter-base voltage is 5V, maximum collector current is 800mA and maximum operating temperature is 150 °C.

BSP52 NPN is a bipolar transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 80V, maximum collector-base voltage is 90V, maximum emitter-base voltage is 5V, maximum collector current is 800mA, and operating and storage temperature range is -55~+150°C.

This document presents the absolute maximum ratings and electrical characteristics of the KSH122 NPN Silicon Darlington Transistor. The transistor features high DC current gain, is suitable for surface mount applications, and has a built-in damper diode at E-C.

This document provides the absolute maximum ratings and electrical characteristics of the KSP13/14 NPN Epitaxial Silicon Darlington Transistor produced by Fairchild Semiconductor Corporation.

This document introduces the absolute maximum ratings and electrical characteristics of the KST13/14 NPN epitaxial silicon transistor from Fairchild Semiconductor Corporation. It includes the maximum rated values and characteristic parameters of the transistor, such as collector-base voltage, collector-emitter voltage, emitter-base voltage, and collector current. In addition, packaging information and some typical characteristic curves of the transistor are provided.

The MMBTA13 NPN Darlington transistor is designed for applications requiring extremely high current gain at collector currents to 1.0A.

The MPSA63 / MMBTA63 / PZTA63 is a PNP Darlington transistor manufactured by Fairchild Semiconductor Corporation. This device has extremely high current gain and can be used in applications up to 800mA.

The MPSA29 is a NPN Darlington Transistor produced by Fairchild Semiconductor Corporation. It features extremely high current gain and can be used in applications with current up to 500 mA.

The NZT605 is an NPN Darlington transistor designed for applications requiring extremely high gain, with collector currents up to 1.0A and high breakdown voltage.

This document describes the features and characteristics of 2N7052 / 2N7053 / NZT7053 NPN Darlington transistors, which are designed for applications requiring extremely high gain and high breakdown voltage.

This is a document about PZTA29 NPN Darlington Transistor. The transistor is designed for applications requiring extremely high current gain at collector currents up to 500mA.