Fairchild Manuals

The FDMS86101 is an N-channel PowerTrench® MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process. It features low on-state resistance and high efficiency.

This document describes the features and characteristics of the FDMS8570SDC N-Channel PowerTrench® SyncFETTM product, including maximum rDS(on), high performance technology, and RoHS compliance.

FDP61N20 is a 200V N-Channel MOSFET with features such as 61A, 200V, RDS(on) = 0.041Ω @VGS = 10V

FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET is rated 600V and has a maximum continuous current of 4.5A with a resistance of 2.0Ω. The product has low gate charge (typ. 10nC), low Crss (typ. 5pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability and RoHS compatibility.

This document is the datasheet of FDP5N50NZ / FDPF5N50NZ N-Channel MOSFET. This device is a N-channel enhancement mode power field effect transistor with RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A, low gate charge (Typ. 9nC), low Crss (Typ. 4pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability, and RoHS compliant.

This document describes the features and characteristics of FDP5800 N-Channel Logic Level PowerTrench® MOSFET, including its RDS(on), high-performance trench technology, low gate charge, high power and current handling capability, etc. It is suitable for applications such as motor/body load control, power train management, injection systems, DC-AC converters and UPS.

FDP55N06/FDPF55N06 is a N-Channel enhancement mode power field effect transistors produced by Fairchild. It has features like 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V, low gate charge ( typical 30 nC), low Crss ( typical 60 pF), fast switching, 100% avalanche tested, improved dv/dt capability.

FDP52N20 / FDPF52N20T is an N-channel MOSFET manufactured by Fairchild Semiconductor with 200V drain-source voltage, 52A continuous current and 0.049 ohm on-state resistance.

FDP51N25 / FDPF51N25 250V N-Channel MOSFET is a Fairchild N-channel enhancement mode power field effect transistor. It features 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF). It uses Fairchild’s proprietary, planar stripe, DMOS technology. It has extremely low on-state resistance, superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficient switched mode power supplies and active power factor correction.

FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ features low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse)

This document describes the features and characteristics of the FDP3672 N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, including maximum rated voltage, maximum current, low Miller charge, low QRR body diode, optimized efficiency, UIS capability, etc. This product is suitable for applications such as DC/DC converters, offline UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, high voltage synchronous rectifiers, direct injection/diesel injection systems, 42V automotive load control, electronic valve train systems, etc.

FDP33N25 / FDPF33N25T 250V N-Channel MOSFET is a low on-state resistance, low gate charge, low input capacitance power field effect transistor.

This document describes the features and characteristics of the FDP3651U N-Channel PowerTrench® MOSFET, including its rDS(on), Qg(TOT), Miller Charge, Qrr Body Diode, etc. The product is suitable for applications such as DC/DC converters and Off-Line UPS, distributed power architectures and VRMs, primary switches for 24V and 48V systems, and high voltage synchronous rectifiers.