Fairchild Manuals

This document describes the features and characteristics of Fairchild Semiconductor Corporation's FQB34P10 / FQI34P10 100V P-Channel MOSFET products. They are produced using advanced DMOS technology, with low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

This document describes the features and characteristics of FQB44N10 / FQI44N10 100V N-Channel MOSFET, including low voltage applications, low on-state resistance, and fast switching.

This document describes the characteristics of Fairchild 60V P-Channel MOSFET, including low gate charge (typical 84 nC), low Crss (typical 320 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

FQB4N80 / FQI4N80 800V N-Channel MOSFET is an N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor International. It features low on-state resistance, superior switching performance and high-energy pulse withstand capability. It is suitable for high efficiency switch mode power supply.

FQB50N06 / FQI50N06 60V N-Channel MOSFET is a low voltage switch device made by Fairchild. Its features are low on-state resistance, superior switching performance, and ability to withstand high energy pulses in avalanche and commutation mode.

This document describes the features and characteristics of FQB50N06L / FQI50N06L 60V logic N-channel MOSFETs. These devices are suitable for low voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.

FQI55N10 is a 100V N-channel MOSFET produced by Fairchild. This device has a continuous current of 55A, 0.026Ω RDS(on) and 100% avalanche testing, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control.

This data sheet provides the features and specifications of FQB5N50C/FQI5N50C 500V N-Channel MOSFET.

This document is the product information of FQB5N90/FQI5N90 900V N-Channel MOSFET produced by Fairchild Semiconductor International

This is a PDF document that introduces the features and characteristics of FQB6N80 / FQI6N80 800V N-Channel MOSFETs produced by Fairchild Semiconductor International.

FQB7N60 / FQI7N60 are N-Channel enhancement mode power field effect transistors suitable for high efficiency switch mode power supply. They feature low on-state resistance, fast switching, high energy pulse, and high voltage withstand capability.

This is an instruction manual for a certain robot product.

This datasheet provides the characteristics parameters of FQB8N60C/FQI8N60C 600V N-channel MOSFET, including rated voltage, maximum current, switching speed, surge current, gate voltage, etc.

This product is a P-channel enhancement mode power field effect transistor produced by Fairchild. It has low on-state resistance, excellent switching performance and high-energy pulse withstand capability. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FQB9N50C/FQI9N50C is a 500V N-Channel MOSFET produced by Fairchild Corporation. It has low on-state resistance and high switching speed. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.