This document describes the features and characteristics of FQB44N10 / FQI44N10 100V N-Channel MOSFET, including low voltage applications, low on-state resistance, and fast switching.
This document is a technical datasheet for the Fairchild Semiconductor FQB44N10 and FQI44N10, which are 100V N-Channel enhancement mode power MOSFETs. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 43.5 A |
| Maximum Junction Temperature | +175 °C |
| Total Gate Charge (Typical) | 48 nC |
| Reverse Transfer Capacitance (Typical) | 85 pF |
The maximum junction temperature rating is 175°C.