FQB9N50C/FQI9N50C is a 500V N-Channel MOSFET produced by Fairchild Corporation. It has low on-state resistance and high switching speed. It is suitable for high efficiency switched mode power supplies, active power factor correction, and half bridge topology electronic lamp ballasts.
This document describes the FQB9N50C/FQI9N50C series of N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 9 A |
| Gate-Source Voltage | +30 V |
| Power Dissipation (Tg = 25°C) | 135 W |
| Operating Temperature Range | -55 to +150 °C |
These devices are suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
The device operates and stores within a range of -55 to +150 °C.