Fairchild Semiconductor FQB5N50C/FQI5N50C 500V N-Channel MOSFET Datasheet

About this manual

This document provides technical specifications for the FQB5N50C and FQI5N50C, which are 500V N-Channel enhancement mode power MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them suitable for high efficiency switched mode power supplies and active power factor correction applications based on half bridge topology.

What's inside

• General Description
• Absolute Maximum Ratings
• Thermal Characteristics
• Electrical Characteristics
• Typical Characteristics
• Gate Charge Test Circuit
• Mechanical Dimensions

Frequently asked questions

What is the maximum single pulsed avalanche energy for this MOSFET?

The device can withstand a single pulsed avalanche energy of up to 300 mJ.

What is the maximum operating and storage temperature range?

The device operates and stores safely within a temperature range of -55 to +150 °C.