Fairchild Manuals

This document describes the features of FDMS7560S N-Channel PowerTrench® SyncFETTM, including maximum on-resistance, advanced package and silicon combination, synchronous Schottky body diode, etc.

FDMS7558S N-Channel PowerTrench®SyncFET is a low rDS(on) and high efficiency switch device, suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch power supplies

The FDMS7556S N-Channel PowerTrench® SyncFETTM is a low rDS(on) and high efficiency MOSFET. It has a maximum rDS(on) of 1.2 mΩ and an efficient monolithic Schottky body diode. It is suitable for synchronous buck converters, notebooks, servers, telecom and high efficiency DC-DC switch mode power supplies.

This document describes the features and characteristics of the FDMS6681Z P-Channel PowerTrench® MOSFET product, released in May 2009, including maximum on-resistance, high ESD protection, etc.

The FDMS6673BZ P-Channel PowerTrench® MOSFET is a high-performance device designed for use in load switch applications. It features an advanced package and silicon combination for low rDS(on), and an HBM ESD protection level of 8 kV typical.

This document describes the features and characteristics of the FDMS5672 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), maximum Qg, low Miller charge, and optimized efficiency at high frequencies.

This document is FDMS5352 N-Channel Power Trench® MOSFET's datasheet, it introduces its features and characteristics, including maximum voltage, maximum current, maximum on-state resistance, minimum on-state resistance, application scenarios, etc.

The FDMS4435BZ is a P-channel MOSFET produced by Fairchild Semiconductor using its advanced Power Trench® process. It features extremely low on-state resistance and is well suited for power management and load switching applications common in notebook computers and portable battery packs.

FDMS3686S PowerTrench® Power Stage is a dual N-channel MOSFET that features low RDS(on), low inductance packaging and optimized layout for higher power efficiency.

FDMS3672 N-Channel UltraFET Trench MOSFET, max rDS(on) is 23mΩ, max ID is 22A, typical Qg is 31nC. These devices are ideal for high frequency DC-DC converters.

FDMS3668S is a dual N-channel MOSFET from Fairchild Semiconductor Corporation. It features low on-resistance and low voltage drop. It is suitable for applications such as computing, communications, general purpose point of load and notebook computers.

The FDN372S is a 30V N-channel power trench SyncFET™ MOSFET designed to maximize power conversion efficiency with low Rds(on) and low gate charge. It is ideal as a low side switch in a synchronous converter.

FDN361BN is a 30V N-channel logic level PowerTrench MOSFET that has fast switching speed and low line losses. It is suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, etc.

This document introduces the FDN360P single P-channel power MOSFET produced by Fairchild Semiconductor. This device is produced using the advanced Power Trench process, which minimizes on-state resistance and maintains low gate charge for superior switching performance. It is suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.