FQB7N60 / FQI7N60 are N-Channel enhancement mode power field effect transistors suitable for high efficiency switch mode power supply. They feature low on-state resistance, fast switching, high energy pulse, and high voltage withstand capability.
This document is a datasheet for the Fairchild Semiconductor FQB7N60 and FQI7N60 N-Channel enhancement mode power field effect transistors. Produced using proprietary planar stripe, DMOS technology, these devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supply applications. They are well-suited for handling high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7.4 A |
| Continuous Drain Current (Tg = 100°C) | 4.7 A |
| Pulsed Drain Current | 29.6 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 580 mJ |
| Power Dissipation (Ta = 25°C) | 142 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.88 °C/W |
| Thermal Resistance, Junction-to-Ambient (PCB Mount) | 62.5 °C/W |
| Drain-Source Breakdown Voltage | 600 V |
| Gate Threshold Voltage | 3.0 to 5.0 V |
| Static Drain-Source On-Resistance | 0.8 to 1.0 Ohm |
| Total Gate Charge | 29 nC |
| Package Type | PAK |
Yes, the FQB7N60 and FQI7N60 are RoHS Compliant.
The maximum continuous drain current at 25°C is 7.4 A.
The operating and storage temperature range is -55 to +150 °C.