This document is the product information of FQB5N90/FQI5N90 900V N-Channel MOSFET produced by Fairchild Semiconductor International
The FQB5N90 / FQI5N90 are 900V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies. They feature a low gate charge of typically 31 nC and low Crss of typically 13 pF. This manual is written in Chinese.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 5.4 A |
| On-Resistance (VGS = 10 V) | 2.3 Ω |
| Total Gate Charge | 31 nC |
| Reverse Transfer Capacitance | 13 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 0.79 °C/W |
The maximum drain-source voltage is 900 V.
The typical on-state resistance is 2.3 Ω at VGS = 10 V.
Yes, the device is RoHS compliant.