FQB4N80 / FQI4N80 800V N-Channel MOSFET is an N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor International. It features low on-state resistance, superior switching performance and high-energy pulse withstand capability. It is suitable for high efficiency switch mode power supply.
The document describes the Fairchild Semiconductor FQB4N80 and FQI4N80, which are 800V N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them well-suited for high-efficiency switch-mode power supplies.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 3.9 A |
| Pulsed Drain Current | 15.6 A |
| Gate-Source Voltage | +30 V |
| Power Dissipation (Ta = 25°C) | 3.13 W |
| Operating Temperature Range | -55 to +150 °C |
| Total Gate Charge | 19 nC |
| Reverse Transfer Capacitance | 8.6 pF |
The maximum continuous drain current at 25°C is 3.9 A.
The maximum gate-source voltage rating is +30 V.
The operating and storage temperature range is -55 to +150 °C.