Fairchild Manuals

This document describes a P-channel 1.8V specified MOSFET that uses Fairchild's advanced low voltage PowerTrench process. It is optimized for battery power management applications.

FDN304P is a P-channel MOSFET with a nominal voltage of 1.8V and uses Fairchild's advanced low voltage PowerTrench process. It features fast switching speed and extremely low RDS(ON).

The FDN302P is a P-channel 2.5V specified MOSFET from Fairchild Semiconductor Corporation. It is optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

This document describes the features and characteristics of the FDMS9620S Dual N-Channel PowerTrench® MOSFET, released in July 2007. It includes parameters such as current, resistance, and power for both Q1 and Q2 models.

The FDMS9600S is a dual N-Channel PowerTrench® MOSFET. It is a 30V, 32A, 8.5mΩ MOSFET with low Qg high side MOSFET and low rDS(on) low side MOSFET. It has thermally efficient, dual Power56 package, pinout optimized, RoHS compliant etc.

This document describes an N-Channel PowerTrench MOSFET with a voltage rating of 30V, current rating of 21A, and maximum on-resistance of 9.5 mΩ. It features advanced packaging and silicon technology for low on-resistance and high efficiency. The MOSFET is suitable for applications such as synchronous buck converters for notebook Vcore and server, notebook battery packs, and load switches.

The FDMS8880 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a minimum on-resistance of 8.5 mΩ, making it suitable for synchronous buck applications in notebooks.

FDMS8848NZ N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency device launched by Fairchild Semiconductor Corporation, with a maximum current of 49A and a maximum resistance of 3.1 mOhm

FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5m� is a MOSFET device produced by Fairchild Semiconductor Corporation. It has low rDS(on) and high efficiency.

FDMS86540 is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. This device has the characteristics of low on-resistance, high efficiency, soft recovery, and is suitable for use in DC/DC converters.

FDMS86520L N-Channel PowerTrench® MOSFET is a low rDS(on) MOSFET introduced by Fairchild Semiconductor Corporation in 2011. The device is designed for DC/DC converters and comes in an MSL1 package with 100% UIL testing and RoHS compliance.

This document describes the features and characteristics of the FDMS86520 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, 100% UIL testing, etc.

The FDMS86500L N-Channel PowerTrench® MOSFET is a low on-resistance, high performance N-channel MOSFET, designed for a variety of DC/DC converter applications.

FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation using Fairchild Semiconductor's advanced Power Trench® process. It has the lowest RDS(on) and excellent switching performance, which is suitable for DC/DC converter synchronous rectifier, telecommunications secondary side rectifier and high end server/workstation.

The FDMS86322 is an N-Channel PowerTrench® MOSFET with a voltage rating of 80V and a current rating of 60A. It features a maximum on-state resistance of 7.65 mΩ at VGS = 10V, ID = 13A, and 12 mΩ at VGS = 6V, ID = 7.2A. The MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process, which minimizes on-state resistance and maintains superior switching performance.