FQI55N10 is a 100V N-channel MOSFET produced by Fairchild. This device has a continuous current of 55A, 0.026Ω RDS(on) and 100% avalanche testing, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control.
This document is a datasheet for the Fairchild FQB55N10 and FQI55N10, which are 100V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 55 A |
| Maximum Junction Temperature | +175 °C |
| Package Type | P2PAK |
| Total Gate Charge (Typical) | 75 nC |
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The device has a 175°C maximum junction temperature rating.