Fairchild Manuals

The FDN359BN is an N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. This MOSFET uses Fairchild Semiconductor's advanced PowerTrench process, which minimizes the on-state resistance while maintaining superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

The FDN358P is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FDN357N is a N-channel logic level enhancement mode field effect transistor with extremely low RDS(ON), suitable for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits.

This datasheet lists the data information of FDN342P, including absolute maximum ratings, electrical characteristics, package outlines and ordering information.

This datasheet is about FDN340P, which is a single P-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. This device has extremely low RDS(ON) (70mΩ@VGS=-4.5V) and low gate charge (7.2nC typical), which is suitable for load switching and power management, battery charging circuits and DC/DC conversion etc. portable electronic applications.

The FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET is produced by Fairchild Semiconductor and uses PowerTrench technology to achieve extremely low RDS(ON) and low gate charge. It is suitable for applications such as DC/DC converters and load switches.

FDN338P is a P-channel MOSFET from Fairchild using Fairchild’s advanced low voltage PowerTrench process. It has low RDS(ON), high switching speed and is suitable for battery management, load switch and battery protection applications.

This document describes the features and absolute maximum ratings of the FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor released in March 1998. The product features a high density cell design, extremely low on-resistance, and maximum DC current capability, making it suitable for low voltage applications where fast switching and low in-line power loss are required.

FDN306P/336P is a single P-channel 2.5V specified MOSFET produced by Fairchild Semiconductor Corporation. These devices are well suited for portable electronics applications such as load switching and power management, battery charging circuits and DC/DC conversion.

The FDN327N is a N-channel MOSFET from Fairchild. It operates at 20V and has a rated current of 2A. The turn-on voltage is 1.8V. This device uses Fairchild's high voltage PowerTrench process and features low gate charge and fast switching speed.

The FDN308P is a N-channel MOSFET from Fairchild Semiconductor Corporation. It is specified for 2.5V operation and has a maximum current of 1.5A. It features a fast switching speed and is manufactured using Fairchild's advanced PowerTrench process. It is suitable for use in power management, load switching, and battery protection applications.

FDN306P is a P-Channel 1.8V specified MOSFET from Fairchild. It has extremely low RDS(ON) and operates at -2.6A, -12V. It also has a fast switching speed.