This datasheet provides the characteristics parameters of FQB8N60C/FQI8N60C 600V N-channel MOSFET, including rated voltage, maximum current, switching speed, surge current, gate voltage, etc.
This document is a datasheet for Fairchild Semiconductor's FQB8N60C and FQI8N60C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology and are designed for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. The document provides absolute maximum ratings, electrical characteristics, and typical performance curves.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 7.5 A |
| Continuous Drain Current (Tg = 100°C) | 4.6 A |
| Power Dissipation (Tg = 25°C) | 147 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| On-Resistance | 1.22 @Vag = 10 V |
| Gate Charge (typical) | 28 nC |
The maximum continuous drain current is 7.5 A when the junction temperature is 25°C.
The maximum drain-source voltage rating is 600 V.
The device operates and stores within a temperature range of -55 to +150 °C.