Fairchild Manuals

FDMS7670 N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency N-channel MOSFET. It has fast switching speed and body diode reverse recovery performance.

The FDMS7660AS N-Channel PowerTrench® SyncFETTM is a low rDS(on) and high efficiency MOSFET suitable for DC/DC converters, notebook Vcore/GPU low side switches, networking point of load low side switches and telecom secondary side rectification.

This document describes the features and characteristics of the FDMS7660 N-Channel PowerTrench® MOSFET, including maximum on-resistance, advanced package and silicon combination, next generation enhanced body diode technology, etc.

The FDMS7658AS is a low-on-resistance switching device designed to minimize losses in power conversion applications. It combines advanced silicon and package technologies to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

The FDMS7656AS N-Channel PowerTrench® SyncFET™ is a low-power, high-efficiency MOSFET device with excellent switching performance. This device uses advanced silicon and package technologies to offer the lowest rDS(on) while maintaining excellent switching performance. It can be used in DC/DC converters, notebook Vcore/GPU low side switches, networking PoL low side switches, and telecom secondary side rectification applications.

The FDMS7650 N-Channel PowerTrench® MOSFET is a 30 V, 100 A, 0.99 mΩ N-Channel MOSFET from Fairchild Semiconductor Corporation that is optimized for low gate charge and extremely low rDS(on). It is suitable for applications such as DC/DC converters, OringFETs, and synchronous rectifiers.

FDMS7620S is a dual N-channel power MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a maximum current of 10.1A.

FDMS7608S is a dual N-channel power transistor produced by Fairchild Semiconductor Corporation. It has a maximum drain-source voltage of 30V, a maximum drain-source current of 22A, and a maximum on-resistance of 10.0mΩ.

The FDMS7606 is a dual N-Channel MOSFET with a Q1 of 30 V, 12 A, 11.4 mΩ and a Q2 of 30 V, 22 A, 11.6 mΩ. It features low on-resistance, high power efficiency, and RoHS compliance.

FDMS7602S is a dual N-channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 30V and a rated current of 30A. The maximum on-resistance is 7.5mΩ.

This document describes the features and characteristics of the FDMS7600AS Dual N-Channel PowerTrench® MOSFET, including maximum resistance and maximum current.

FDMS7580 N-Channel Power Trench® MOSFET is a high-performance MOSFET with a low on-resistance (7.5mΩ at VGS=10V,ID=15A) optimized for low gate charge, fast switching speed and soft recovery.

The FDMS7578 N-Channel Power Trench® MOSFET is a 25V, 5.8 mΩ power transistor. It features advanced packaging and silicon combination for low rDS(on) and high efficiency. Additionally, it utilizes next generation enhanced body diode technology for soft recovery. The product is specifically designed to improve the overall efficiency and minimize switch node ringing of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.

The FDMS7572S N-Channel PowerTrench®SyncFET is a high efficiency, low power N-channel MOSFET with a maximum on-resistance of 2.9mΩ, a rated voltage of 25V, and a rated current of 49A. The device features advanced silicon and package technologies for excellent switching performance and low on-resistance.