This document describes the characteristics of Fairchild 60V P-Channel MOSFET, including low gate charge (typical 84 nC), low Crss (typical 320 pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.
This document provides technical specifications for the FQB47P06/FQI47P06, which are P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance.
| Continuous Drain Current (TC = 25°C) | -47 A |
|---|---|
| On-State Resistance (RDS(on)) | 0.026 Ω @VGS = -10 V |
| Maximum Junction Temperature (TJ) | 175 °C |
| Total Gate Charge (Qg) | Typical 84 nC |
The maximum continuous drain current is -33.2 A when the case temperature is 100°C.
The device has a maximum junction temperature rating of 175 °C.