This is a PDF document that introduces the features and characteristics of FQB6N80 / FQI6N80 800V N-Channel MOSFETs produced by Fairchild Semiconductor International.
This document is a datasheet for the Fairchild Semiconductor FQB6N80 and FQI6N80, which are 800V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switch mode power supply applications and feature a low gate charge and improved dv/dt capability.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 5.8 A |
| On-Resistance (VGS = 10 V) | 1.95 Ω |
| Gate Charge (Typical) | 31 nC |
| Reverse Transfer Capacitance | 14 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 5.8 A when the case temperature is 25°C.
The maximum drain-source voltage rating is 800 V.
The maximum power dissipation is 158 W when mounted on the minimum pad size recommended.