This product is a P-channel enhancement mode power field effect transistor produced by Fairchild. It has low on-state resistance, excellent switching performance and high-energy pulse withstand capability. It is suitable for applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.
This document provides technical specifications for the Fairchild Semiconductor FQB8P10 and FQI8P10 P-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -8.0 A |
| Continuous Drain Current (Tc = 100°C) | -5.7 A |
| Pulsed Drain Current | -32 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 150 mJ |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typ) | 0.532 Ohm |
| Gate Charge (Typ) | 12 nC |
| Reverse Transfer Capacitance (Typ) | 30 pF |
These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The maximum junction temperature rating is 175°C.
Yes, the devices are 100% avalanche tested.