Fairchild Manuals

FDP100N10 N-Channel PowerTrench® MOSFET is a low on-resistance power MOSFET with fast switching speed, low gate charge, extremely low RDS(on), high power and current handing capability. It is suitable for DC to DC converters and synchronous rectification applications.

This document introduces the FDP090N10 N-Channel PowerTrench® MOSFET product released in January 2008. The product features a voltage of 100V, a current of 75A, and an RDS(on) of 9mΩ. It uses high-performance trench technology, with fast switching speed, low gate charge, and high power handling capability. It is suitable for applications such as DC-to-DC converters and synchronous rectification.

FDP085N10A_F102 is a high-performance N-channel MOSFET with RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A, fast switching speed and low gate charge, supporting DC to DC converters and synchronous rectification for telecom power applications.

FDP083N15A_F102 N-Channel PowerTrench® MOSFET is a high performance, low power N-channel MOSFET manufactured by Fairchild Semiconductor. This MOSFET features 8.3mΩ low RDS(on), 6.85mΩ (Typ.)@ VGS = 10V, ID = 75A fast switching speed and low gate charge. It is suitable for DC to DC converters, synchronous rectification for Server/Telecom PSU, battery charger, AC motor drives and Uninterruptible Power Supplies (UPS).

The FDP047N10 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, which has a low Rdson, a high switching speed, a low gate charge, a high power and current handling capability, and is RoHS compliant.

FDP047N08 is an N-Channel PowerTrench MOSFET power field-effect transistor. It features low on-state resistance, fast switching speed, low gate charge, and high-performance trench technology.

FDP040N06 is a N-Channel MOSFET produced by Fairchild Semiconductor. Its maximum feature is RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A, with fast switching speed, low gate charge, high performance trench technology and extremely low RDS(on), suitable for DC to DC converters/synchronous rectification applications.

FDP036N10A N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has the features of RDS(on) = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A, and is suitable for DC to DC Convertors / Synchronous Rectification applications.

This document describes the features and characteristics of FDP032N08 N-Channel PowerTrench® MOSFET, including 75V drain-to-source voltage, 235A drain current, and 3.2mΩ on-state resistance.

This product is a N-Channel PowerTrench MOSFET with low on-state resistance, fast switching speed and low gate charge.

The FDP027N08B_F102 is an N-channel MOSFET produced by Fairchild. Its maximum voltage is 80V and its maximum current is 223A. Its typical on-state resistance is 2.21 mOhms.

FDPA025N06 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor, which features extremely low RDS(on), fast switching speed, low gate charge, high power and current handling capability.

This document describes the features and characteristics of FDP020N06B_F102 N-Channel PowerTrench® MOSFET, including low on-state resistance, low reverse-recovery charge, fast switching speed, etc. It is suitable for applications such as synchronous rectification, battery chargers, DC motor drives, etc.

This document describes the features and characteristics of FDN86246 N-Channel PowerTrench® MOSFET, including maximum rDS(on) values, high-performance trench technology, high power and current handling capability, etc.