Fairchild Manuals

FDP2710 250V N-Channel PowerTrench MOSFET is a N-channel MOSFET device produced by Fairchild Semiconductor. It is manufactured using Fairchild Semiconductor's advanced PowerTrench process and has low RDS(on) and fast switching speed.

FDP26N40 / FDPF26N40 N-Channel MOSFET is a product produced by Fairchild Semiconductor Corporation. Its rated voltage is 400V, rated current is 26A, and on-state resistance is 0.16 ohms. This product has low gate charge, low Crss, fast switching, 100% avalanche tested and other features.

FDP2614 is a 200V N-channel power MOSFET manufactured by Fairchild Semiconductor. Its features include low on-state resistance (RDS(on)) and fast switching speed. This product is suitable for PDP applications.

FDP24N40 is a N-channel enhancement mode power field effect transistor produced by Fairchild. It has low on-state resistance, low gate charge, low gate input capacitance and fast switching. It is suitable for high efficiency switching power supplies and active power factor correction applications.

This document describes the features and characteristics of the FDP22N50N N-Channel MOSFET from April 2009.

This document describes the features and characteristics of the UniFET TM FDP18N20F / FDPF18N20FT N-Channel MOSFET, including its low on-state resistance, low gate charge, fast switching speed, and RoHS compliance. This product is suitable for high-efficiency switching mode power supplies and active power factor correction.

FDP15N40 / FDPF15N40 N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. This device uses Fairchild's proprietary planar stripe DMOS technology, which has the advantages of low on-state resistance, fast switching and 100% avalanche protection. It is suitable for high-efficiency switched mode power supplies and active power factor correction applications.

FDP150N10A_F102 N-Channel PowerTrench® MOSFET is a high-performance, low-resistance MOSFET that uses Fairchild Semiconductor's advanced PowerTrench process to minimize on-state resistance while maintaining superior switching performance.

FDP150N10 N-Channel PowerTrench® MOSFET is a high performance N-Channel MOSFET produced by Fairchild Semiconductor with extremely low RDS(on), fast switching speed and low gate charge. It can be used for DC to DC convertors and synchronous rectification.

FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Its features are RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A, low gate charge ( Typ. 26nC), low Crss ( Typ. 12pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability, RoHS compliant

FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

This document describes the features and characteristics of the FDP12N50 / FDPF12N50T N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching, 100% avalanche tested capability, etc.

FDP120N10 N-Channel PowerTrench® MOSFET is a high performance, low on-resistance N-channel MOSFET that can be used for DC-DC converters and synchronous rectification applications. It features low RDS(on), high switching speed, low gate charge and is RoHS compliant.

FDP10N60NZ/FDPF10N60NZ N-Channel MOSFET is a power switching device produced by Fairchild Semiconductor Corporation, with characteristics of 600V, 10A, and 0.75Ω.